Gutenberg Open Science: Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device

Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-5645

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DC Field	Value	Language
dc.contributor.author	Schnitzspan, Leo	-
dc.contributor.author	Tries, Alexander	-
dc.contributor.author	Kläui, Mathias	-
dc.date.accessioned	2021-02-10T08:35:27Z	-
dc.date.available	2021-02-10T08:35:27Z	-
dc.date.issued	2020	-
dc.identifier.uri	https://openscience.ub.uni-mainz.de/handle/20.500.12030/5649	-
dc.description.abstract	In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device's properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4K to 270K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current annealing affects the graphene/metal interface significantly, whereas the intrinsic carrier density and carrier mobility of the hBN-encapsulated few-layer graphene are almost unaffected, contrary to often reported mobility improvements. However, after current annealing, a 75% reduction in the contact resistance improves the overall performance of such a heterostructure device and the backgate-dependent transfer curve becomes more symmetric with respect to the Dirac point. A maximum carrier mobility of 11 200 cm 2 V - 1 s - 1 for this hBN/graphene/hBN heterostructure was measured at 4K, showing good device performance, in particular, after current annealing.	en_GB
dc.language.iso	eng	de
dc.rights	InCopyright	*
dc.rights.uri	http://rightsstatements.org/vocab/InC/1.0/	*
dc.subject.ddc	530 Physik	de_DE
dc.subject.ddc	530 Physics	en_GB
dc.title	Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device	en_GB
dc.type	Zeitschriftenaufsatz	de
dc.identifier.doi	http://doi.org/10.25358/openscience-5645	-
jgu.type.contenttype	Scientific article	de
jgu.type.dinitype	article	en_GB
jgu.type.version	Accepted version	de
jgu.type.resource	Text	de
jgu.organisation.department	FB 08 Physik, Mathematik u. Informatik	de
jgu.organisation.number	7940	-
jgu.organisation.name	Johannes Gutenberg-Universität Mainz	-
jgu.rights.accessrights	openAccess	-
jgu.journal.title	Journal of applied physics	de
jgu.journal.volume	128	de
jgu.journal.issue	12	de
jgu.pages.alternative	124302	de
jgu.publisher.year	2020	-
jgu.publisher.name	American Inst. of Physics	de
jgu.publisher.place	Melville, NY	de
jgu.publisher.uri	https://doi.org/10.1063/5.0016471	de
jgu.publisher.issn	0021-8979	de
jgu.organisation.place	Mainz	-
jgu.subject.ddccode	530	de
jgu.publisher.doi	10.1063/5.0016471
jgu.organisation.ror	https://ror.org/023b0x485
Appears in collections:	JGU-Publikationen

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