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Authors: Schnitzspan, Leo
Tries, Alexander
Kläui, Mathias
Title: Electron transport and the effect of current annealing in a two-point contacted hBN/graphene/hBN heterostructure device
Online publication date: 10-Feb-2021
Year of first publication: 2020
Language: english
Abstract: In this work, we fabricated a 2D van der Waals heterostructure device in an inert nitrogen atmosphere by means of a dry transfer technique in order to obtain a clean and largely impurity free stack of hexagonal boron nitride (hBN)-encapsulated few-layer graphene. The heterostructure was contacted from the top with gold leads on two sides, and the device's properties including intrinsic charge carrier density, mobility, and contact resistance were studied as a function of temperature from 4K to 270K. We show that the contact resistance of the device mainly originates from the metal/graphene interface, which contributes a significant part to the total resistance. We demonstrate that current annealing affects the graphene/metal interface significantly, whereas the intrinsic carrier density and carrier mobility of the hBN-encapsulated few-layer graphene are almost unaffected, contrary to often reported mobility improvements. However, after current annealing, a 75% reduction in the contact resistance improves the overall performance of such a heterostructure device and the backgate-dependent transfer curve becomes more symmetric with respect to the Dirac point. A maximum carrier mobility of 11 200 cm 2 V - 1 s - 1 for this hBN/graphene/hBN heterostructure was measured at 4K, showing good device performance, in particular, after current annealing.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
Version: Accepted version
Publication type: Zeitschriftenaufsatz
Document type specification: Scientific article
License: In Copyright
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Journal: Journal of applied physics
Pages or article number: 124302
Publisher: American Inst. of Physics
Publisher place: Melville, NY
Issue date: 2020
ISSN: 0021-8979
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Publisher DOI: 10.1063/5.0016471
Appears in collections:JGU-Publikationen

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