Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-5144
Authors: Tries, Alexander
Richter, Nils
Chen, Zongping
Narita, Akimitsu
Müllen, Klaus
Wang, Hai I.
Bonn, Mischa
Kläui, Mathias
Title: Hysteresis in graphene nanoribbon field-effect devices
Online publication date: 20-Oct-2020
Language: english
Abstract: Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
ROR: https://ror.org/023b0x485
DOI: http://doi.org/10.25358/openscience-5144
Version: Accepted version
Publication type: Zeitschriftenaufsatz
Document type specification: Scientific article
License: In Copyright
Information on rights of use: https://rightsstatements.org/vocab/InC/1.0/
Journal: Physical chemistry, chemical physics
22
10
Pages or article number: 5667
5672
Publisher: RSC Publ.
Publisher place: Cambridge
Issue date: 2020
ISSN: 1463-9076
Publisher URL: https://www.doi.org/10.1039/d0cp00298d
Publisher DOI: 10.1039/d0cp00298d
Appears in collections:JGU-Publikationen

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