Authors:	Tries, Alexander Richter, Nils Chen, Zongping Narita, Akimitsu Müllen, Klaus Wang, Hai I. Bonn, Mischa Kläui, Mathias
Title:	Hysteresis in graphene nanoribbon field-effect devices
Online publication date:	20-Oct-2020
Language:	english
Abstract:	Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the main origin of the hysteresis effect.
DDC:	530 Physik 530 Physics
Institution:	Johannes Gutenberg-Universität Mainz
Department:	FB 08 Physik, Mathematik u. Informatik
Place:	Mainz
ROR:	https://ror.org/023b0x485
DOI:	http://doi.org/10.25358/openscience-5144
Version:	Accepted version
Publication type:	Zeitschriftenaufsatz
Document type specification:	Scientific article
License:	In Copyright
Information on rights of use:	https://rightsstatements.org/vocab/InC/1.0/
Journal:	Physical chemistry, chemical physics 22 10
Pages or article number:	5667 5672
Publisher:	RSC Publ.
Publisher place:	Cambridge
Issue date:	2020
ISSN:	1463-9076
Publisher URL:	https://www.doi.org/10.1039/d0cp00298d
Publisher DOI:	10.1039/d0cp00298d
Appears in collections:	JGU-Publikationen