Controllable z-polarized spin current in artificially structured ferromagnetic oxide with strong spin-orbit coupling

Abstract

Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicates fabrication and affects device stability and scalability. Here, we propose a novel approach using z-polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering. We fabricate La0.67Sr0.33MnO3-SrIrO3 (LSIMO) thin films with robust spin-orbit coupling (SOC) and ferromagnetic order through orbital and lattice reconstruction, integrating SrIrO3 and La0.67Sr0.33MnO3 materials. Our investigation reveals that y- and z-polarized spin currents, driven by the spin Hall and spin-orbit precession effects, enable field-free switching of perpendicular magnetization. Notably, the z-polarized spin currents are tunable via the in-plane magnetization of LSIMO. These findings present a promising pathway for the development of energy-efficient spintronic devices, offering improved performance and scalability.