Controllable z-polarized spin current in artificially structured ferromagnetic oxide with strong spin-orbit coupling
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Abstract
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is
crucial for developing advanced magnetic memory and logic devices. However,
existing methods often involve complex designs or hybrid approaches, which
complicates fabrication and affects device stability and scalability. Here, we propose a
novel approach using z-polarized spin currents for deterministic switching of
perpendicular magnetization through interfacial engineering. We fabricate
La0.67Sr0.33MnO3-SrIrO3 (LSIMO) thin films with robust spin-orbit coupling (SOC) and
ferromagnetic order through orbital and lattice reconstruction, integrating SrIrO3 and
La0.67Sr0.33MnO3 materials. Our investigation reveals that y- and z-polarized spin
currents, driven by the spin Hall and spin-orbit precession effects, enable field-free
switching of perpendicular magnetization. Notably, the z-polarized spin currents are
tunable via the in-plane magnetization of LSIMO. These findings present a promising
pathway for the development of energy-efficient spintronic devices, offering improved
performance and scalability.