Authors:	Meer, Hendrik Gomonay, Olena Wittmann, Angela Kläui, Mathias
Title:	Antiferromagnetic insulatronics : spintronics in insulating 3d metal oxides with antiferromagnetic coupling
Online publication date:	6-Jul-2023
Year of first publication:	2023
Language:	english
Abstract:	Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest has resurged due to the recent observation of long-distance spin transport, current-induced switching, and THz emission. As a result, insulating transition metal oxides are now considered to be attractive candidates for active elements in future spintronic devices. Here, we discuss some of the most promising materials systems and highlight recent advances in reading and writing antiferromagnetic ordering. This article aims to provide an overview of the current research and potential future directions in the field of antiferromagnetic insulatronics.
DDC:	530 Physik 530 Physics
Institution:	Johannes Gutenberg-Universität Mainz
Department:	FB 08 Physik, Mathematik u. Informatik
Place:	Mainz
ROR:	https://ror.org/023b0x485
DOI:	http://doi.org/10.25358/openscience-9259
Version:	Accepted version
Publication type:	Zeitschriftenaufsatz
License:	In Copyright
Information on rights of use:	http://rightsstatements.org/vocab/InC/1.0/
Journal:	Applied physics letters 122 8
Pages or article number:	080502
Publisher:	American Inst. of Physics
Publisher place:	Melville, NY
Issue date:	2023
ISSN:	0003-6951
Publisher DOI:	10.1063/5.0135079
Appears in collections:	JGU-Publikationen