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Authors: Zhao, Xiaoxuan
Liu, Yang
Zhu, Daoqian
Sall, Mamour
Zhang, Xueying
Ma, Helin
Langer, Jürgen
Ocker, Berthold
Jaiswal, Samridh
Jakob, Gerhard
Kläui, Mathias
Zhao, Weisheng
Ravelosona, Dafiné
Title: Spin-orbit torque driven multi-level switching in He+ irradiated W-CoFeB-MgO Hall bars with perpendicular anisotropy
Online publication date: 22-Oct-2020
Language: english
Abstract: We have investigated the spin-orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm(2) with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall resistance state is induced, which is further verified by finite element simulations. Such a method to control electrically multi-level resistances using He+ ion irradiation shows great potential in realizing neuromorphic and memristor devices.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
Version: Accepted version
Publication type: Zeitschriftenaufsatz
Document type specification: Scientific article
License: In Copyright
Information on rights of use:
Journal: Applied physics letters
Pages or article number: Art. 242401
Publisher: American Inst. of Physics
Publisher place: Melville, NY
Issue date: 2020
ISSN: 0003-6951
Publisher URL:
Publisher DOI: 10.1063/5.0010679
Appears in collections:JGU-Publikationen

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