Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-18
Authors: Baldrati, Lorenzo
Gomonay, Olena
Ross, Andrew
Filianina, Mariia
Lebrun, Romain
Ramos, R.
Leveille, Cyril
Fuhrmann, Felix
Forrest, T. R.
Maccherozzi, F.
Valencia, S.
Kronast, F.
Saitoh, E.
Sinova, Jairo
Kläui, Mathias
Title: Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging
Online publication date: 21-Jan-2020
Language: english
Abstract: We probe the current-induced magnetic switching of insulating antiferromagnet–heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
DOI: http://doi.org/10.25358/openscience-18
Version: Accepted version
Publication type: Zeitschriftenaufsatz
License: in Copyright
Information on rights of use: https://rightsstatements.org/vocab/InC/1.0/
Journal: Physical review letters
123
17
Pages or article number: Art. 177201
Publisher: APS
Publisher place: College Park, Md.
Issue date: 2019
ISSN: 1079-7114
0031-9007
Publisher's URL: http://dx.doi.org/10.1103/PhysRevLett.123.177201
Appears in collections:JGU-Publikationen

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