Authors:	Schmitt, Christin Rajan, Adithya Beneke, Grischa Kumar, Aditya Sparmann, Tobias Meer, Hendrik Bednarz, Beatrice Ramos, Rafael Niño, Miguel Angel Foerster, Michael Saitoh, Eiji Kläui, Mathias
Title:	Mechanisms of electrical switching of ultrathin CoO/Pt bilayers
Online publication date:	29-Feb-2024
Year of first publication:	2024
Language:	english
Abstract:	We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlying antiferromagnetic switching mechanism. Surprisingly, we find that for ultrathin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing these results to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the details of the reorientation of the Néel vector in ultrathin CoO(4 nm). This allows us to understand how opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin–orbit torque-based switching mechanism that can dominate in very thin films.
DDC:	530 Physik 530 Physics
Institution:	Johannes Gutenberg-Universität Mainz
Department:	FB 08 Physik, Mathematik u. Informatik
Place:	Mainz
ROR:	https://ror.org/023b0x485
DOI:	http://doi.org/10.25358/openscience-10132
Version:	Published version
Publication type:	Zeitschriftenaufsatz
Document type specification:	Scientific article
License:	CC BY-NC-ND
Information on rights of use:	https://creativecommons.org/licenses/by-nc-nd/4.0/
Journal:	Nano letters 24 5
Pages or article number:	1471 1476
Publisher:	American Chemical Society
Publisher place:	Washington, DC
Issue date:	2024
ISSN:	1530-6992
Publisher DOI:	10.1021/acs.nanolett.3c02890
Appears in collections:	DFG-491381577-H