High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy

dc.contributor.authorBommanaboyena, S. P.
dc.contributor.authorBergfeldt, T.
dc.contributor.authorHeller, R.
dc.contributor.authorKläui, Mathias
dc.contributor.authorJourdan, Martin
dc.date.accessioned2020-11-27T08:35:30Z
dc.date.available2020-11-27T08:35:30Z
dc.date.issued2020
dc.description.abstractThe recently discovered phenomenon of Neel spin-orbit torque in antiferromagnetic Mn2Au [Bodnar et al., Nat. Commun. 9, 348 (2018); Meinert et al., Phys. Rev. Appl. 9, 064040 (2018); Bodnar et al., Phys. Rev. B 99, 140409(R) (2019)] has generated huge interest in this material for spintronics applications. In this paper, we report the preparation and characterization of high quality Mn2Au thin films by molecular beam epitaxy and compare them with magnetron sputtered samples. The films were characterized for their structural and morphological properties using reflective high-energy electron diffraction, x-ray diffraction, x-ray reflectometry, atomic force microscopy, and temperature dependent resistance measurements. The thin film composition was determined using both inductively coupled plasma optical emission spectroscopy and Rutherford backscattering spectrometry techniques. The MBE-grown films were found to show a superior smooth morphology and a low defect concentration, resulting in reduced scattering of the charge carriers.en_GB
dc.identifier.doihttp://doi.org/10.25358/openscience-5211
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/5215
dc.language.isoeng
dc.rightsInC-1.0
dc.rights.urihttps://rightsstatements.org/vocab/InC/1.0/
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleHigh quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxyen_GB
dc.typeZeitschriftenaufsatzde_DE
jgu.journal.issue24
jgu.journal.titleJournal of applied physics
jgu.journal.volume127
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde_DE
jgu.organisation.nameJohannes Gutenberg-Universität Mainzde_DE
jgu.organisation.number7940
jgu.organisation.placeMainz
jgu.organisation.rorhttps://ror.org/023b0x485
jgu.pages.alternativeArt. 243901
jgu.publisher.doi10.1063/5.0009566
jgu.publisher.issn0021-8979
jgu.publisher.nameAmerican Inst. of Physics,
jgu.publisher.placeMelville, NY
jgu.publisher.urihttps://doi.org/10.1063/5.0009566
jgu.publisher.year2020
jgu.rights.accessrightsopenAccessen_GB
jgu.subject.ddccode530
jgu.type.contenttypeScientific articleen_GB
jgu.type.dinitypeArticleen_GB
jgu.type.resourceTexten_GB
jgu.type.versionAccepted versionen_GB

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