Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

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dc.contributor.authorRoss, Andrew
dc.contributor.authorLebrun, Romain
dc.contributor.authorUlloa, Camilo
dc.contributor.authorGrave, Daniel A.
dc.contributor.authorKay, Asaf
dc.contributor.authorBaldrati, Lorenzo
dc.contributor.authorKronast, Florian
dc.contributor.authorValencia, Sergio
dc.contributor.authorRothschild, Avner
dc.contributor.authorKläui, Mathias
dc.date.accessioned2020-11-24T09:16:51Z
dc.date.available2020-11-24T09:16:51Z
dc.date.issued2020
dc.description.abstractReading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (alpha-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic-based structures. To understand the observed complex SMR field dependence, we analyze the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.en_GB
dc.identifier.doihttp://doi.org/10.25358/openscience-5271
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/5275
dc.language.isoengde
dc.rightsInC-1.0*
dc.rights.urihttps://rightsstatements.org/vocab/InC/1.0/*
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleStructural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin filmsen_GB
dc.typeZeitschriftenaufsatzde
jgu.journal.issue9de
jgu.journal.titlePhysical review : Bde
jgu.journal.volume102de
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde
jgu.organisation.nameJohannes Gutenberg-Universität Mainz
jgu.organisation.number7940
jgu.organisation.placeMainz
jgu.organisation.rorhttps://ror.org/023b0x485
jgu.pages.alternativeArt. 094415de
jgu.publisher.doi10.1103/PhysRevB.102.094415
jgu.publisher.issn2469-9969de
jgu.publisher.issn2469-9950de
jgu.publisher.nameAPSde
jgu.publisher.placeCollege Park, Md.de
jgu.publisher.urihttps://doi.org/10.1103/PhysRevB.102.094415de
jgu.publisher.year2020
jgu.rights.accessrightsopenAccess
jgu.subject.ddccode530de
jgu.type.contenttypeScientific articlede
jgu.type.dinitypeArticleen_GB
jgu.type.resourceTextde
jgu.type.versionAccepted versionde

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