Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-6737
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dc.contributor.authorSchreiber, Felix-
dc.contributor.authorMeer, Hendrik-
dc.contributor.authorSchmitt, Christin-
dc.contributor.authorRamos, Rafael-
dc.contributor.authorSaitoh, E.-
dc.contributor.authorBaldrati, Lorenzo-
dc.contributor.authorKläui, Mathias-
dc.date.accessioned2022-02-04T09:49:31Z-
dc.date.available2022-02-04T09:49:31Z-
dc.date.issued2021-
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/6748-
dc.description.abstractWe analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.en_GB
dc.language.isoengde
dc.rightsInCopyright*
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleMagnetic sensitivity distribution of Hall devices in antiferromagnetic switching experimentsen_GB
dc.typeZeitschriftenaufsatzde
dc.identifier.doihttp://doi.org/10.25358/openscience-6737-
jgu.type.contenttypeScientific articlede
jgu.type.dinitypearticleen_GB
jgu.type.versionAccepted versionde
jgu.type.resourceTextde
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde
jgu.organisation.number7940-
jgu.organisation.nameJohannes Gutenberg-Universität Mainz-
jgu.rights.accessrightsopenAccess-
jgu.journal.titlePhysical review appliedde
jgu.journal.volume16de
jgu.journal.issue6de
jgu.pages.alternative064023de
jgu.publisher.year2021-
jgu.publisher.nameAmerican Physical Societyde
jgu.publisher.placeCollege Park, Md. u.a.de
jgu.publisher.urihttps://doi.org/10.1103/PhysRevApplied.16.064023de
jgu.publisher.issn2331-7019de
jgu.organisation.placeMainz-
jgu.subject.ddccode530de
jgu.publisher.doi10.1103/PhysRevApplied.16.064023
jgu.organisation.rorhttps://ror.org/023b0x485
Appears in collections:JGU-Publikationen

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