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Authors: Schreiber, Felix
Meer, Hendrik
Schmitt, Christin
Ramos, Rafael
Saitoh, E.
Baldrati, Lorenzo
Kläui, Mathias
Title: Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments
Online publication date: 4-Feb-2022
Language: english
Abstract: We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
Version: Accepted version
Publication type: Zeitschriftenaufsatz
Document type specification: Scientific article
License: In Copyright
Information on rights of use:
Journal: Physical review applied
Pages or article number: 064023
Publisher: American Physical Society
Publisher place: College Park, Md. u.a.
Issue date: 2021
ISSN: 2331-7019
Publisher URL:
Publisher DOI: 10.1103/PhysRevApplied.16.064023
Appears in collections:JGU-Publikationen

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