Gutenberg Open Science: Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene

Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-6565

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DC Field	Value	Language
dc.contributor.author	Braatz, Marie-Luise	-
dc.contributor.author	Veith, Lothar	-
dc.contributor.author	Köster, Janis	-
dc.contributor.author	Kaiser, Ute	-
dc.contributor.author	Binder, Axel	-
dc.contributor.author	Gradhand, Martin	-
dc.contributor.author	Kläui, Mathias	-
dc.date.accessioned	2022-01-03T09:15:42Z	-
dc.date.available	2022-01-03T09:15:42Z	-
dc.date.issued	2021	-
dc.identifier.uri	https://openscience.ub.uni-mainz.de/handle/20.500.12030/6575	-
dc.description.abstract	The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass shows that the N dopants decrease the slope of the linear bands, which are characteristic for the band structure of graphene around the Dirac point. The Berry phase, however, remains unaffected by the modifications induced through defects and dopants, showing that the overall band structure of the samples is still exhibiting the key properties as expected for Dirac fermions in graphene.	en_GB
dc.language.iso	eng	de
dc.rights	InCopyright	*
dc.rights.uri	http://rightsstatements.org/vocab/InC/1.0/	*
dc.subject.ddc	530 Physik	de_DE
dc.subject.ddc	530 Physics	en_GB
dc.title	Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene	en_GB
dc.type	Zeitschriftenaufsatz	de
dc.identifier.doi	http://doi.org/10.25358/openscience-6565	-
jgu.type.contenttype	Scientific article	de
jgu.type.dinitype	article	en_GB
jgu.type.version	Accepted version	de
jgu.type.resource	Text	de
jgu.organisation.department	FB 08 Physik, Mathematik u. Informatik	de
jgu.organisation.number	7940	-
jgu.organisation.name	Johannes Gutenberg-Universität Mainz	-
jgu.rights.accessrights	openAccess	-
jgu.journal.title	Physical review materials	de
jgu.journal.volume	5	de
jgu.journal.issue	8	de
jgu.pages.alternative	084003	de
jgu.publisher.year	2021	-
jgu.publisher.name	American Physical Society	de
jgu.publisher.place	College Park, Md.	de
jgu.publisher.uri	https://doi.org/10.1103/PhysRevMaterials.5.084003	de
jgu.publisher.issn	2475-9953	de
jgu.organisation.place	Mainz	-
jgu.subject.ddccode	530	de
jgu.publisher.doi	10.1103/PhysRevMaterials.5.084003
jgu.organisation.ror	https://ror.org/023b0x485
Appears in collections:	JGU-Publikationen

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