Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-6565
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dc.contributor.authorBraatz, Marie-Luise-
dc.contributor.authorVeith, Lothar-
dc.contributor.authorKöster, Janis-
dc.contributor.authorKaiser, Ute-
dc.contributor.authorBinder, Axel-
dc.contributor.authorGradhand, Martin-
dc.contributor.authorKläui, Mathias-
dc.date.accessioned2022-01-03T09:15:42Z-
dc.date.available2022-01-03T09:15:42Z-
dc.date.issued2021-
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/6575-
dc.description.abstractThe addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass shows that the N dopants decrease the slope of the linear bands, which are characteristic for the band structure of graphene around the Dirac point. The Berry phase, however, remains unaffected by the modifications induced through defects and dopants, showing that the overall band structure of the samples is still exhibiting the key properties as expected for Dirac fermions in graphene.en_GB
dc.language.isoengde
dc.rightsin Copyright*
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/*
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleImpact of nitrogen doping on the band structure and the charge carrier scattering in monolayer grapheneen_GB
dc.typeZeitschriftenaufsatzde
dc.identifier.doihttp://doi.org/10.25358/openscience-6565-
jgu.type.contenttypeScientific articlede
jgu.type.dinitypearticleen_GB
jgu.type.versionAccepted versionde
jgu.type.resourceTextde
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde
jgu.organisation.number7940-
jgu.organisation.nameJohannes Gutenberg-Universität Mainz-
jgu.rights.accessrightsopenAccess-
jgu.journal.titlePhysical review materialsde
jgu.journal.volume5de
jgu.journal.issue8de
jgu.pages.alternative084003de
jgu.publisher.year2021-
jgu.publisher.nameAmerican Physical Societyde
jgu.publisher.placeCollege Park, Md.de
jgu.publisher.urihttps://doi.org/10.1103/PhysRevMaterials.5.084003de
jgu.publisher.issn2475-9953de
jgu.organisation.placeMainz-
jgu.subject.ddccode530de
jgu.publisher.doi10.1103/PhysRevMaterials.5.084003
Appears in collections:JGU-Publikationen

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