Please use this identifier to cite or link to this item:
http://doi.org/10.25358/openscience-6565
Authors: | Braatz, Marie-Luise Veith, Lothar Köster, Janis Kaiser, Ute Binder, Axel Gradhand, Martin Kläui, Mathias |
Title: | Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene |
Online publication date: | 3-Jan-2022 |
Year of first publication: | 2021 |
Language: | english |
Abstract: | The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass shows that the N dopants decrease the slope of the linear bands, which are characteristic for the band structure of graphene around the Dirac point. The Berry phase, however, remains unaffected by the modifications induced through defects and dopants, showing that the overall band structure of the samples is still exhibiting the key properties as expected for Dirac fermions in graphene. |
DDC: | 530 Physik 530 Physics |
Institution: | Johannes Gutenberg-Universität Mainz |
Department: | FB 08 Physik, Mathematik u. Informatik |
Place: | Mainz |
ROR: | https://ror.org/023b0x485 |
DOI: | http://doi.org/10.25358/openscience-6565 |
Version: | Accepted version |
Publication type: | Zeitschriftenaufsatz |
Document type specification: | Scientific article |
License: | In Copyright |
Information on rights of use: | http://rightsstatements.org/vocab/InC/1.0/ |
Journal: | Physical review materials 5 8 |
Pages or article number: | 084003 |
Publisher: | American Physical Society |
Publisher place: | College Park, Md. |
Issue date: | 2021 |
ISSN: | 2475-9953 |
Publisher URL: | https://doi.org/10.1103/PhysRevMaterials.5.084003 |
Publisher DOI: | 10.1103/PhysRevMaterials.5.084003 |
Appears in collections: | JGU-Publikationen |
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File | Description | Size | Format | ||
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impact_of_nitrogen_doping_on_-20211222100440371.pdf | 384.39 kB | Adobe PDF | View/Open |