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Authors: Braatz, Marie-Luise
Veith, Lothar
Köster, Janis
Kaiser, Ute
Binder, Axel
Gradhand, Martin
Kläui, Mathias
Title: Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene
Online publication date: 3-Jan-2022
Language: english
Abstract: The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass shows that the N dopants decrease the slope of the linear bands, which are characteristic for the band structure of graphene around the Dirac point. The Berry phase, however, remains unaffected by the modifications induced through defects and dopants, showing that the overall band structure of the samples is still exhibiting the key properties as expected for Dirac fermions in graphene.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
Version: Accepted version
Publication type: Zeitschriftenaufsatz
Document type specification: Scientific article
License: in Copyright
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Journal: Physical review materials
Pages or article number: 084003
Publisher: American Physical Society
Publisher place: College Park, Md.
Issue date: 2021
ISSN: 2475-9953
Publisher URL:
Publisher DOI: 10.1103/PhysRevMaterials.5.084003
Appears in collections:JGU-Publikationen

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