Autoren:	Braatz, Marie-Luise Veith, Lothar Köster, Janis Kaiser, Ute Binder, Axel Gradhand, Martin Kläui, Mathias
Titel:	Impact of nitrogen doping on the band structure and the charge carrier scattering in monolayer graphene
Online-Publikationsdatum:	3-Jan-2022
Erscheinungsdatum:	2021
Sprache des Dokuments:	Englisch
Zusammenfassung/Abstract:	The addition of nitrogen as a dopant in monolayer graphene is a flexible approach to tune the electronic properties of graphene as required for applications. Here, we investigate the impact of the doping process that adds N dopants and defects on the key electronic properties, such as the mobility, the effective mass, the Berry phase, and the scattering times of the charge carriers. Measurements at low temperatures and magnetic fields up to 9 T show a decrease of the mobility with increasing defect density due to elastic, short-range scattering. At low magnetic fields weak localization indicates an inelastic contribution depending on both defects and dopants. Analysis of the effective mass shows that the N dopants decrease the slope of the linear bands, which are characteristic for the band structure of graphene around the Dirac point. The Berry phase, however, remains unaffected by the modifications induced through defects and dopants, showing that the overall band structure of the samples is still exhibiting the key properties as expected for Dirac fermions in graphene.
DDC-Sachgruppe:	530 Physik 530 Physics
Veröffentlichende Institution:	Johannes Gutenberg-Universität Mainz
Organisationseinheit:	FB 08 Physik, Mathematik u. Informatik
Veröffentlichungsort:	Mainz
ROR:	https://ror.org/023b0x485
DOI:	http://doi.org/10.25358/openscience-6565
Version:	Accepted version
Publikationstyp:	Zeitschriftenaufsatz
Weitere Angaben zur Dokumentart:	Scientific article
Nutzungsrechte:	Urheberrechtsschutz
Informationen zu den Nutzungsrechten:	http://rightsstatements.org/vocab/InC/1.0/
Zeitschrift:	Physical review materials 5 8
Seitenzahl oder Artikelnummer:	084003
Verlag:	American Physical Society
Verlagsort:	College Park, Md.
Erscheinungsdatum:	2021
ISSN:	2475-9953
URL der Originalveröffentlichung:	https://doi.org/10.1103/PhysRevMaterials.5.084003
DOI der Originalveröffentlichung:	10.1103/PhysRevMaterials.5.084003
Enthalten in den Sammlungen:	JGU-Publikationen