Gutenberg Open Science: Role of Interface in Ferroelectric Polymer based Memory Diodes

Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-5512

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DC Field	Value	Language
dc.contributor.author	Kumar, Manasvi	-
dc.date.accessioned	2021-01-07T11:50:56Z	-
dc.date.available	2021-01-07T11:50:56Z	-
dc.date.issued	2021	-
dc.identifier.uri	https://openscience.ub.uni-mainz.de/handle/20.500.12030/5516	-
dc.description.abstract	Organic electronic devices have the potential to alter our everyday lives with their unique characteristics, such as flexibility, stretchability and low-cost. Among the envisioned devices are non-volatile memories for applications in contactless identification transponders and smart labels. This thesis investigates the operation of such a memory device that uses phase-separated blends of a ferroelectric and semiconducting polymer in a diode configuration. The blend film is composed of columns of semiconductor domains that run continuously through the ferroelectric polymer matrix from the bottom to the top electrode. Polarization of the ferroelectric polymer upon application of appropriate electric fields (greater than coercive field), leads to the modulation of the injection barrier at the metal-semiconductor contact.28 The diode exhibits a bistable rectifying current-voltage characteristic. Numerical models have been proposed to describe the device physics of the memory diodes. This thesis provides a potential solution for ambient processing and operation of the memory diodes along with providing the experimental proof of the proposed operation mechanism of the memory diodes. Moreover, current driven memory devices have been demonstrated. Based on tuneable injection barrier, MEMOLED, a light emitting diode with an inherent ferroelectric switch, has been demonstrated. The advantage of a built-in rectifying switch in the construction of the MEMOLED is to present a non-emissive OFF state and an emissive non-volatile ON state. However, the current efficiency is low as compared to that of pristine semiconductor polymer based OLEDs, and the retention time of the emissive state is short. Here, it is shown that charge trapping in the ferroelectric phase could be a possible reason for the lower performance of the MEMOLEDs. Finally, organic ferroelectric tunnel junctions, based on ultra-thin film of P(VDF-TrFE), with colossal tunneling electroresistance are demonstrated.	en_GB
dc.language.iso	eng	de
dc.rights	InCopyright	*
dc.rights.uri	https://rightsstatements.org/page/InC/1.0/?language=en	*
dc.subject.ddc	530 Physik	de_DE
dc.subject.ddc	530 Physics	en_GB
dc.subject.ddc	540 Chemie	de_DE
dc.subject.ddc	540 Chemistry and allied sciences	en_GB
dc.subject.ddc	600 Technik	de_DE
dc.subject.ddc	600 Technology (Applied sciences)	en_GB
dc.title	Role of Interface in Ferroelectric Polymer based Memory Diodes	en_GB
dc.type	Dissertation	de
dc.identifier.urn	urn:nbn:de:hebis:77-openscience-1a499c68-c85d-44cc-a79c-7c47b233e2068	-
dc.identifier.doi	http://doi.org/10.25358/openscience-5512	-
jgu.type.dinitype	doctoralThesis	en_GB
jgu.type.version	Original work	de
jgu.type.resource	Text	de
jgu.date.accepted	2020-11-11	-
jgu.description.extent	viii, 90 Seiten	de
jgu.organisation.department	FB 08 Physik, Mathematik u. Informatik	de
jgu.organisation.year	2020	-
jgu.organisation.number	7940	-
jgu.organisation.name	Johannes Gutenberg-Universität Mainz	-
jgu.rights.accessrights	openAccess	-
jgu.organisation.place	Mainz	-
jgu.subject.ddccode	530	de
jgu.subject.ddccode	540	de
jgu.subject.ddccode	600	de
jgu.organisation.ror	https://ror.org/023b0x485
Appears in collections:	JGU-Publikationen

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