Authors:	Kumar, Manasvi
Title:	Role of Interface in Ferroelectric Polymer based Memory Diodes
Online publication date:	7-Jan-2021
Year of first publication:	2021
Language:	english
Abstract:	Organic electronic devices have the potential to alter our everyday lives with their unique characteristics, such as flexibility, stretchability and low-cost. Among the envisioned devices are non-volatile memories for applications in contactless identification transponders and smart labels. This thesis investigates the operation of such a memory device that uses phase-separated blends of a ferroelectric and semiconducting polymer in a diode configuration. The blend film is composed of columns of semiconductor domains that run continuously through the ferroelectric polymer matrix from the bottom to the top electrode. Polarization of the ferroelectric polymer upon application of appropriate electric fields (greater than coercive field), leads to the modulation of the injection barrier at the metal-semiconductor contact.28 The diode exhibits a bistable rectifying current-voltage characteristic. Numerical models have been proposed to describe the device physics of the memory diodes. This thesis provides a potential solution for ambient processing and operation of the memory diodes along with providing the experimental proof of the proposed operation mechanism of the memory diodes. Moreover, current driven memory devices have been demonstrated. Based on tuneable injection barrier, MEMOLED, a light emitting diode with an inherent ferroelectric switch, has been demonstrated. The advantage of a built-in rectifying switch in the construction of the MEMOLED is to present a non-emissive OFF state and an emissive non-volatile ON state. However, the current efficiency is low as compared to that of pristine semiconductor polymer based OLEDs, and the retention time of the emissive state is short. Here, it is shown that charge trapping in the ferroelectric phase could be a possible reason for the lower performance of the MEMOLEDs. Finally, organic ferroelectric tunnel junctions, based on ultra-thin film of P(VDF-TrFE), with colossal tunneling electroresistance are demonstrated.
DDC:	530 Physik 530 Physics 540 Chemie 540 Chemistry and allied sciences 600 Technik 600 Technology (Applied sciences)
Institution:	Johannes Gutenberg-Universität Mainz
Department:	FB 08 Physik, Mathematik u. Informatik
Place:	Mainz
ROR:	https://ror.org/023b0x485
DOI:	http://doi.org/10.25358/openscience-5512
URN:	urn:nbn:de:hebis:77-openscience-1a499c68-c85d-44cc-a79c-7c47b233e2068
Version:	Original work
Publication type:	Dissertation
License:	In Copyright
Information on rights of use:	https://rightsstatements.org/page/InC/1.0/?language=en
Extent:	viii, 90 Seiten
Appears in collections:	JGU-Publikationen