Numerical coupling of thermal-electric network models and energy-transport equations including optoelectronic semiconductor devices
Files
Date issued
Authors
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
License
Abstract
In this work the numerical coupling of thermal and electric network
models with model equations for optoelectronic
semiconductor devices is presented.
Modified nodal analysis (MNA) is applied to model electric
networks. Thermal effects are modeled by an accompanying
thermal
network.
Semiconductor devices are modeled by the energy-transport
model, that allows for thermal effects. The energy-transport model is
expandend to a model for optoelectronic semiconductor devices.
The temperature
of the crystal lattice of the semiconductor devices is modeled by the
heat flow eqaution. The corresponding heat source term is derived
under thermodynamical and phenomenological considerations of energy fluxes.
The energy-transport model is coupled directly into the network
equations and the heat flow equation for the lattice temperature is
coupled directly into the accompanying thermal network. The coupled
thermal-electric network-device model results in a system of partial
differential-algebraic equations (PDAE).
Numerical examples are presented for the coupling of network- and
one-dimensional semiconductor equations. Hybridized mixed finite
elements are applied for the space discretization of the semiconductor
equations.
Backward difference formluas are applied for time
discretization. Thus, positivity of charge carrier densities and
continuity of the current density is guaranteed even for the coupled model.