De-channeling in terms of instantaneous transition rates : computer simulations for 855 MeV electrons at (110) planes of diamond

dc.contributor.authorBacke, Hartmut
dc.date.accessioned2022-12-16T11:41:46Z
dc.date.available2022-12-16T11:41:46Z
dc.date.issued2022
dc.description.abstractMonte-Carlo simulation calculation have been performed for 855 MeV electrons channeling in (110) planes of a diamond single crystal. The continuum potential picture has been utilized. Both, the transverse potential and the angular distributions of the scattered electrons at screened atoms are based on the Doyle–Turner scattering factors which were extrapolated with the functional dependence of the Molière representation to large momentum transfers. Scattering cross-sections at bound electrons have been derived for energies less than 30 keV from the double differential cross-section as function of both, energy and momentum transfer, taking into account also longitudinal and transverse excitations. For energies above 30 keV the Møller cross-section is used. The dynamics of the particle in the continuum transverse potential has been described classically. Results of the channeling process are presented in terms of instantaneous transition rates as function of the penetration depth, indicating that channeling can be described by a single exponential function only after about 15 μm when the equilibration phase has been reached. As a byproduct, improved drift and diffusion coefficients entering the Fokker–Planck equation have been derived with which its predictive power can be improved.en_GB
dc.description.sponsorshipGefördert durch die Deutsche Forschungsgemeinschaft (DFG) - Projektnummer 491381577de
dc.identifier.doihttp://doi.org/10.25358/openscience-8344
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/8360
dc.language.isoengde
dc.rightsCC-BY-4.0*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleDe-channeling in terms of instantaneous transition rates : computer simulations for 855 MeV electrons at (110) planes of diamonden_GB
dc.typeZeitschriftenaufsatzde
jgu.journal.titleThe European physical journal : Dde
jgu.journal.volume76de
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde
jgu.organisation.nameJohannes Gutenberg-Universität Mainz
jgu.organisation.number7940
jgu.organisation.placeMainz
jgu.organisation.rorhttps://ror.org/023b0x485
jgu.pages.alternative153de
jgu.publisher.doi10.1140/epjd/s10053-022-00464-wde
jgu.publisher.issn1434-6079de
jgu.publisher.nameSpringerde
jgu.publisher.placeBerlin u.a.de
jgu.publisher.year2022
jgu.rights.accessrightsopenAccess
jgu.subject.ddccode530de
jgu.subject.dfgNaturwissenschaftende
jgu.type.dinitypeArticleen_GB
jgu.type.resourceTextde
jgu.type.versionPublished versionde

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