Gutenberg Open Science: Strain control of magnetization for magnetoresistive sensors

Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-9615

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DC Field	Value	Language
dc.contributor.advisor	Kläui, Mathias	-
dc.contributor.author	Masciocchi, Giovanni	-
dc.date.accessioned	2023-11-08T14:53:49Z	-
dc.date.available	2023-11-08T14:53:49Z	-
dc.date.issued	2023	-
dc.identifier.uri	https://openscience.ub.uni-mainz.de/handle/20.500.12030/9633	-
dc.description.abstract	This thesis focuses on the magneto-elastic interactions in thin films and their significance in technological applications with particular focus on sensors. The magnetostriction, constant which determines the strength of these interactions, plays a crucial role in various applications. For instance, strain immunity is essential for magnetic sensors to reduce strain cross-sensitivity, particularly in the case of flexible substrates. On the other hand, to sense strain mate- rials require giant strain effects. The optimization of the magnetic sensing layer, including strain anisotropy, is crucial for magnetic sensors performance, depending on their specific application requirements. The first part of this thesis discusses the characterization and the engineering of the strain-dependent material properties for the development of the free layer of magnetic sensors. The focus is on two material platforms: a Ni/Fe multilayer and Permalloy. The use of He+ ion irradiation as a post-deposition technique is explored to control magnetostriction and enhance magnetic softness. The strain dependence of anisotropy and magnetization compensation is explored in another material platform, Co/Gd synthetic ferrimagnets, that has the unique ability to switch their magnetic state using a laser pulse. In the second part of this thesis, the control of domain walls using strain is extensively studied for their applications in memory devices and magnetic sensors. Domain walls offer non-volatile positioning and energy efficiency in various applications. However, the influence of mechanical strain or stress on these sensing components has been overlooked. In our studies, we highlight the importance of considering mechanical strain in actual devices, exploring the effects of different types of strain on a sensor-type device. Uniform strain and its compensation through material preparation are discussed, along with the conceptualization and realization of a new magnetic sensor based on spatially variant strain. Furthermore, the impact of time-dependent strain on domain wall devices in the presence of surface acoustic waves is investigated. By considering these factors, a comprehensive understanding of the behavior and optimization of free layer of magnetic sensors under different strain conditions is achieved.	en_GB
dc.language.iso	eng	de
dc.rights	CC BY	*
dc.rights.uri	https://creativecommons.org/licenses/by/4.0/	*
dc.subject.ddc	530 Physik	de_DE
dc.subject.ddc	530 Physics	en_GB
dc.title	Strain control of magnetization for magnetoresistive sensors	en_GB
dc.type	Dissertation	de
dc.identifier.urn	urn:nbn:de:hebis:77-openscience-c0ab8101-5223-4e27-925f-7d85510130e05	-
dc.identifier.doi	http://doi.org/10.25358/openscience-9615	-
jgu.type.dinitype	doctoralThesis	en_GB
jgu.type.version	Original work	de
jgu.type.resource	Text	de
jgu.date.accepted	2023-10-13	-
jgu.description.extent	v, 256 Seiten ; Illustrationen, Diagramme	de
jgu.organisation.department	FB 08 Physik, Mathematik u. Informatik	de
jgu.organisation.department	MaxPlanck GraduateCenter	de
jgu.organisation.number	7940	-
jgu.organisation.number	9010	-
jgu.organisation.name	Johannes Gutenberg-Universität Mainz	-
jgu.rights.accessrights	openAccess	-
jgu.organisation.place	Mainz	-
jgu.subject.ddccode	530	de
jgu.organisation.ror	https://ror.org/023b0x485	-
Appears in collections:	JGU-Publikationen

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