Gutenberg Open Science: Strain-controlled domain wall injection into nanowires for sensor applications

Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-6736

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DC Field	Value	Language
dc.contributor.author	Masciocchi, Giovanni	-
dc.contributor.author	Fattouhi, Mouad	-
dc.contributor.author	Kehlberger, Andreas	-
dc.contributor.author	Lopez-Diaz, Luis	-
dc.contributor.author	Syskaki, Maria-Andromachi	-
dc.contributor.author	Kläui, Mathias	-
dc.date.accessioned	2022-02-04T09:24:32Z	-
dc.date.available	2022-02-04T09:24:32Z	-
dc.date.issued	2021	-
dc.identifier.uri	https://openscience.ub.uni-mainz.de/handle/20.500.12030/6747	-
dc.description.abstract	We investigate experimentally the effects of strain on the injection of 180 & DEG; domain walls (DWs) from a nucleation pad into magnetic nanowires, as typically used for DW-based sensors. In our study, the strain, generated by substrate bending, induces in the material a uniaxial anisotropy due to magnetoelastic coupling. To compare the strain effects, Co 40 Fe 40 B 20, Ni, and Ni 82 Fe 18 samples with in-plane magnetization and different magnetoelastic coupling are deposited. In these samples, we measure the magnetic field required for the injection of a DW, by imaging using differential contrast in a magneto-optical Kerr microscope. We find that strain increases the DW injection field and that the switching mechanism depends strongly on the strain direction. We observe that low magnetic anisotropy facilitates the creation of a domain wall at the junction between the pad and the wire, whereas a strain-induced magnetic easy axis significantly increases the coercive field of the nucleation pad. Moreover, we find that these effects of strain-induced anisotropy can be counteracted by an additional magnetic uniaxial anisotropy perpendicular to the strain-induced easy axis. We perform micromagnetic simulations to support the interpretation of our experimental findings showing that the above described observations can be explained by the effective anisotropy in the device. The anisotropy influences the switching mechanism in the nucleation pad as well as the pinning of the DW at the wire entrance. As the DW injection is a key operation for sensor performances, the observations show that strain is imposing a lower limit for the sensor field operating window.	en_GB
dc.language.iso	eng	de
dc.rights	InCopyright	*
dc.rights.uri	http://rightsstatements.org/vocab/InC/1.0/	*
dc.subject.ddc	530 Physik	de_DE
dc.subject.ddc	530 Physics	en_GB
dc.title	Strain-controlled domain wall injection into nanowires for sensor applications	en_GB
dc.type	Zeitschriftenaufsatz	de
dc.identifier.doi	http://doi.org/10.25358/openscience-6736	-
jgu.type.contenttype	Scientific article	de
jgu.type.dinitype	article	en_GB
jgu.type.version	Accepted version	de
jgu.type.resource	Text	de
jgu.organisation.department	FB 08 Physik, Mathematik u. Informatik	de
jgu.organisation.number	7940	-
jgu.organisation.name	Johannes Gutenberg-Universität Mainz	-
jgu.rights.accessrights	openAccess	-
jgu.journal.title	Journal of applied physics	de
jgu.journal.volume	130	de
jgu.pages.alternative	183903	de
jgu.publisher.year	2021	-
jgu.publisher.name	American Inst. of Physics	de
jgu.publisher.place	Melville, NY	de
jgu.publisher.uri	https://doi.org/10.1063/5.0069661	de
jgu.publisher.issn	0021-8979	de
jgu.organisation.place	Mainz	-
jgu.subject.ddccode	530	de
jgu.publisher.doi	10.1063/5.0069661
jgu.organisation.ror	https://ror.org/023b0x485
Appears in collections:	JGU-Publikationen

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