Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-5297
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dc.contributor.authorBodnar, S. Yu.-
dc.contributor.authorSkourski, Y.-
dc.contributor.authorGomonay, Olena-
dc.contributor.authorSinova, Jairo-
dc.contributor.authorKläui, Mathias-
dc.contributor.authorJourdan, Martin-
dc.date.accessioned2020-11-18T10:44:47Z-
dc.date.available2020-11-18T10:44:47Z-
dc.date.issued2020-
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/5301-
dc.description.abstractIn antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the Neel vector. We investigate the magnetoresistance effects resulting from magnetic-field-induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples are exposed to 60-T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance is measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110] direction, an anisotropic magnetoresistance of similar or equal to -0.15% is measured. In the case of a forced alignment of the staggered magnetization parallel to the hard [100] direction, evidence for a larger anisotropic magnetoresistance effect is found. Furthermore, transient resistance reductions of similar or equal to 1% are observed, which we associate with the annihilation of antiferromagnetic domain walls by the magnetic field pulses.en_GB
dc.language.isoengde
dc.rightsInCopyright*
dc.rights.urihttps://rightsstatements.org/vocab/InC/1.0/*
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleMagnetoresistance effects in the metallic antiferromagnet Mn2Auen_GB
dc.typeZeitschriftenaufsatzde
dc.identifier.doihttp://doi.org/10.25358/openscience-5297-
jgu.type.dinitypearticleen_GB
jgu.type.versionAccepted versionde
jgu.type.resourceTextde
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde
jgu.organisation.number7940-
jgu.organisation.nameJohannes Gutenberg-Universität Mainz-
jgu.rights.accessrightsopenAccess-
jgu.journal.titlePhysical review appliedde
jgu.journal.volume14de
jgu.journal.issue1de
jgu.pages.alternativeArt. 014004de
jgu.publisher.year2020-
jgu.publisher.nameAmerican Physical Societyde
jgu.publisher.placeCollege Park, Md. u.a.de
jgu.publisher.urihttps://doi.org/10.1103/PhysRevApplied.14.014004de
jgu.publisher.issn2331-7019de
jgu.organisation.placeMainz-
jgu.subject.ddccode530de
jgu.publisher.doi10.1103/PhysRevApplied.14.014004
jgu.organisation.rorhttps://ror.org/023b0x485
Appears in collections:JGU-Publikationen

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