Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-5209
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dc.contributor.authorZhao, Xiaoxuan-
dc.contributor.authorLiu, Yang-
dc.contributor.authorZhu, Daoqian-
dc.contributor.authorSall, Mamour-
dc.contributor.authorZhang, Xueying-
dc.contributor.authorMa, Helin-
dc.contributor.authorLanger, Jürgen-
dc.contributor.authorOcker, Berthold-
dc.contributor.authorJaiswal, Samridh-
dc.contributor.authorJakob, Gerhard-
dc.contributor.authorKläui, Mathias-
dc.contributor.authorZhao, Weisheng-
dc.contributor.authorRavelosona, Dafiné-
dc.date.accessioned2020-10-22T09:54:59Z-
dc.date.available2020-10-22T09:54:59Z-
dc.date.issued2020-
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/5213-
dc.description.abstractWe have investigated the spin-orbit torque-driven magnetization switching in W/CoFeB/MgO Hall bars with perpendicular magnetic anisotropy. He+ ion irradiation through a mask has been used to reduce locally the effective perpendicular anisotropy at a Hall cross. Anomalous Hall effect measurements combined with Kerr microscopy indicate that the switching process is dominated by domain wall (DW) nucleation in the irradiated region followed by rapid domain propagation at a current density as low as 0.8 MA/cm(2) with an assisting in-plane magnetic field. Thanks to the implemented strong pinning of the DW at the transition between the irradiated and the non-irradiated region, an intermediate Hall resistance state is induced, which is further verified by finite element simulations. Such a method to control electrically multi-level resistances using He+ ion irradiation shows great potential in realizing neuromorphic and memristor devices.en_GB
dc.language.isoengde
dc.rightsInCopyright*
dc.rights.urihttps://rightsstatements.org/vocab/InC/1.0/*
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleSpin-orbit torque driven multi-level switching in He+ irradiated W-CoFeB-MgO Hall bars with perpendicular anisotropyen_GB
dc.typeZeitschriftenaufsatzde
dc.identifier.doihttp://doi.org/10.25358/openscience-5209-
jgu.type.contenttypeScientific articlede
jgu.type.dinitypearticleen_GB
jgu.type.versionAccepted versionde
jgu.type.resourceTextde
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatikde
jgu.organisation.number7940-
jgu.organisation.nameJohannes Gutenberg-Universität Mainz-
jgu.rights.accessrightsopenAccess-
jgu.journal.titleApplied physics lettersde
jgu.journal.volume116de
jgu.journal.issue24de
jgu.pages.alternativeArt. 242401de
jgu.publisher.year2020-
jgu.publisher.nameAmerican Inst. of Physicsde
jgu.publisher.placeMelville, NYde
jgu.publisher.urihttps://doi.org/10.1063/5.0010679de
jgu.publisher.issn0003-6951de
jgu.organisation.placeMainz-
jgu.subject.ddccode530de
jgu.publisher.doi10.1063/5.0010679
jgu.organisation.rorhttps://ror.org/023b0x485
Appears in collections:JGU-Publikationen

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