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http://doi.org/10.25358/openscience-4008Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Balke, Benjamin | |
| dc.date.accessioned | 2008-01-22T11:02:31Z | |
| dc.date.available | 2008-01-22T12:02:31Z | |
| dc.date.issued | 2008 | |
| dc.identifier.uri | https://openscience.ub.uni-mainz.de/handle/20.500.12030/4010 | - |
| dc.description.abstract | This work emphasizes the potential of Heusler compounds in a wide range of spintronic applications. Using electronic structure calculations it is possible to design compounds for specific applications. Examples for GMR and TMR applications, for spin injection into semiconductors, and for spin torque transfer applications will be shown. After a detailed introduction about spintronics and related materials chapter 5 reports about the investigation of new half-metallic compounds where the Fermi energy is tuned in the middle of the gap to result in more stable compounds for GMR and TMR applications. The bulk properties of the quaternary Heusler alloy Co2Mn(1-x)Fe(x)Si with the Fe concentration ranging from x=0 to 1 will be reported and the results suggest that the best candidate for applications may be found at an iron concentration of about 50%. Due to the effect that in the Co2Mn(1-x)Fe(x)Si series the transition metal carrying the localized moment is exchanged and this might lead to unexpected effects on the magnetic properties if the samples are not completely homogeneous chapter 6 reports about the optimization of the Heusler compounds for GMR and TMR applications. The structural and magnetic properties of the quaternary Heusler alloy Co2FeAl(1-x)Si(x) with varying Si concentration will be reported. From the combination of experimental (better order for high Si content) and theoretical findings (robust gap at x = 0.5) it is concluded that a compound with an intermediate Si concentration close to x=0.5-0.7 would be best suited for spintronic applications, especially for GMR and TMR applications. In chapter 7 the detailed investigation of compounds for spin injection into semiconductors will be reported. It will be shown that the diluted magnetic semiconductors based on CoTiSb with a very low lattice mismatch among each other are interesting materials for spintronics applications like Spin-LEDs or other spin injection devices. Chapter 8 refers about the investigation of the theoretically predicted half-metallic completely compensated-ferrimagnet Mn$_3$Ga as a suitable material for spin torque transfer applications. The Curie temperature is above 730~K and the electronic structure calculations indicate a nearly half-metallic ferrimagnetic order with 88% spin polarization at the Fermi energy.} | en_GB |
| dc.description.abstract | Die vorliegende Arbeit unterstreicht das Potential von Heusler-Verbindungen für verschiedene Bereiche der Anwendung in der Magnetoelektronik. Mit Hilfe von Bandstrukturrechnungen ist es möglich Verbindungen für spezifische Anwendungen zu designen. Es werden Beispiele für GMR und TMR Anwendungen, für Spininjektion in Halbleitermaterialien und für "Spin torque transfer"-Anwendungen besprochen. Nach einer detailierten Einleitung über Spintronik und damit zusammenhängende Phänomenen und Materialien, wird in Kapitel 5&6 über die Untersuchungen an neuen halbmetalisch-ferromagnetischen Verbindungen berichtet, bei denen die Fermienergie in die Mitte der Bandlücke geschoben wird, um einen möglichst stabilen halbmetalisch-ferromagnetischen Charakter für die Anwendungen zu erhalten. Kapitel 7 beschreibt sehr detailiert die Untersuchungen an Materialien, die ein hohes Potential zur Spininjektion in Halbleitermaterialien aufweisen. Es wird gezeigt, dass magnetische Halbleiter - basierend auf dem Halbleiter CoTiSb - hergestellt werden können und durch verschiedene Dotierungselemente gezielt die Eigenschaften der Verbindungen beeinflußt werden können. In Kapitel 8 wird über die Untersuchungen an dem theoretisch vorhergesagtem komplett kompensiertem halbmetallisch Ferrimagneten Mn3Ga als potentielles Material für "Spin torque transfer"-Anwendungen berichtet. | de_DE |
| dc.language.iso | eng | |
| dc.rights | InCopyright | de_DE |
| dc.rights.uri | https://rightsstatements.org/vocab/InC/1.0/ | |
| dc.subject.ddc | 500 Naturwissenschaften | de_DE |
| dc.subject.ddc | 500 Natural sciences and mathematics | en_GB |
| dc.title | Special Heusler compounds for spintronic applications | en_GB |
| dc.type | Dissertation | de_DE |
| dc.identifier.urn | urn:nbn:de:hebis:77-15399 | |
| dc.identifier.doi | http://doi.org/10.25358/openscience-4008 | - |
| jgu.type.dinitype | doctoralThesis | |
| jgu.type.version | Original work | en_GB |
| jgu.type.resource | Text | |
| jgu.organisation.department | FB 09 Chemie, Pharmazie u. Geowissensch. | - |
| jgu.organisation.year | 2007 | |
| jgu.organisation.number | 7950 | - |
| jgu.organisation.name | Johannes Gutenberg-Universität Mainz | - |
| jgu.rights.accessrights | openAccess | - |
| jgu.organisation.place | Mainz | - |
| jgu.subject.ddccode | 500 | |
| opus.date.accessioned | 2008-01-22T11:02:31Z | |
| opus.date.modified | 2008-01-22T11:02:31Z | |
| opus.date.available | 2008-01-22T12:02:31 | |
| opus.organisation.string | FB 09: Chemie, Pharmazie und Geowissenschaften: FB 09: Chemie, Pharmazie und Geowissenschaften | de_DE |
| opus.identifier.opusid | 1539 | |
| opus.institute.number | 0900 | |
| opus.metadataonly | false | |
| opus.type.contenttype | Dissertation | de_DE |
| opus.type.contenttype | Dissertation | en_GB |
| jgu.organisation.ror | https://ror.org/023b0x485 | |
| Appears in collections: | JGU-Publikationen | |
