Bitte benutzen Sie diese Kennung, um auf die Ressource zu verweisen: http://doi.org/10.25358/openscience-2904
Autoren: Parvez, Khaled
Titel: Chemical exfoliation of graphene and its application in organic electronics and energy storage devices
Online-Publikationsdatum: 23-Okt-2014
Erscheinungsdatum: 2014
Sprache des Dokuments: Englisch
Zusammenfassung/Abstract: Graphene, the thinnest two-dimensional material possible, is considered as a realistic candidate for the numerous applications in electronic, energy storage and conversion devices due to its unique properties, such as high optical transmittance, high conductivity, excellent chemical and thermal stability. However, the electronic and chemical properties of graphene are highly dependent on their preparation methods. Therefore, the development of novel chemical exfoliation process which aims at high yield synthesis of high quality graphene while maintaining good solution processability is of great concern. This thesis focuses on the solution production of high-quality graphene by wet-chemical exfoliation methods and addresses the applications of the chemically exfoliated graphene in organic electronics and energy storage devices.rnPlatinum is the most commonly used catalysts for fuel cells but they suffered from sluggish electron transfer kinetics. On the other hand, heteroatom doped graphene is known to enhance not only electrical conductivity but also long term operation stability. In this regard, a simple synthetic method is developed for the nitrogen doped graphene (NG) preparation. Moreover, iron (Fe) can be incorporated into the synthetic process. As-prepared NG with and without Fe shows excellent catalytic activity and stability compared to that of Pt based catalysts.rnHigh electrical conductivity is one of the most important requirements for the application of graphene in electronic devices. Therefore, for the fabrication of electrically conductive graphene films, a novel methane plasma assisted reduction of GO is developed. The high electrical conductivity of plasma reduced GO films revealed an excellent electrochemical performance in terms of high power and energy densities when used as an electrode in the micro-supercapacitors.rnAlthough, GO can be prepared in bulk scale, large amount of defect density and low electrical conductivity are major drawbacks. To overcome the intrinsic limitation of poor quality of GO and/or reduced GO, a novel protocol is extablished for mass production of high-quality graphene by means of electrochemical exfoliation of graphite. The prepared graphene shows high electrical conductivity, low defect density and good solution processability. Furthermore, when used as electrodes in organic field-effect transistors and/or in supercapacitors, the electrochemically exfoliated graphene shows excellent device performances. The low cost and environment friendly production of such high-quality graphene is of great importance for future generation electronics and energy storage devices. rn
DDC-Sachgruppe: 540 Chemie
540 Chemistry and allied sciences
Veröffentlichende Institution: Johannes Gutenberg-Universität Mainz
Organisationseinheit: Externe Einrichtungen
Veröffentlichungsort: Mainz
ROR: https://ror.org/023b0x485
DOI: http://doi.org/10.25358/openscience-2904
URN: urn:nbn:de:hebis:77-38775
Version: Original work
Publikationstyp: Dissertation
Nutzungsrechte: Urheberrechtsschutz
Informationen zu den Nutzungsrechten: https://rightsstatements.org/vocab/InC/1.0/
Umfang: 208 S.
Enthalten in den Sammlungen:JGU-Publikationen

Dateien zu dieser Ressource:
  Datei Beschreibung GrößeFormat
Miniaturbild
3877.pdf12.91 MBAdobe PDFÖffnen/Anzeigen