Gutenberg Open Science: Mechanisms of electrical switching of ultrathin CoO/Pt bilayers

Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-10132

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DC Field	Value	Language
dc.contributor.author	Schmitt, Christin	-
dc.contributor.author	Rajan, Adithya	-
dc.contributor.author	Beneke, Grischa	-
dc.contributor.author	Kumar, Aditya	-
dc.contributor.author	Sparmann, Tobias	-
dc.contributor.author	Meer, Hendrik	-
dc.contributor.author	Bednarz, Beatrice	-
dc.contributor.author	Ramos, Rafael	-
dc.contributor.author	Niño, Miguel Angel	-
dc.contributor.author	Foerster, Michael	-
dc.contributor.author	Saitoh, Eiji	-
dc.contributor.author	Kläui, Mathias	-
dc.date.accessioned	2024-02-29T11:26:03Z	-
dc.date.available	2024-02-29T11:26:03Z	-
dc.date.issued	2024	-
dc.identifier.uri	https://openscience.ub.uni-mainz.de/handle/20.500.12030/10150	-
dc.description.abstract	We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlying antiferromagnetic switching mechanism. Surprisingly, we find that for ultrathin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing these results to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the details of the reorientation of the Néel vector in ultrathin CoO(4 nm). This allows us to understand how opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin–orbit torque-based switching mechanism that can dominate in very thin films.	en_GB
dc.language.iso	eng	de
dc.rights	CC BY-NC-ND	*
dc.rights.uri	https://creativecommons.org/licenses/by-nc-nd/4.0/	*
dc.subject.ddc	530 Physik	de_DE
dc.subject.ddc	530 Physics	en_GB
dc.title	Mechanisms of electrical switching of ultrathin CoO/Pt bilayers	en_GB
dc.type	Zeitschriftenaufsatz	de
dc.identifier.doi	http://doi.org/10.25358/openscience-10132	-
jgu.type.contenttype	Scientific article	de
jgu.type.dinitype	article	en_GB
jgu.type.version	Published version	de
jgu.type.resource	Text	de
jgu.organisation.department	FB 08 Physik, Mathematik u. Informatik	de
jgu.organisation.number	7940	-
jgu.organisation.name	Johannes Gutenberg-Universität Mainz	-
jgu.rights.accessrights	openAccess	-
jgu.journal.title	Nano letters	de
jgu.journal.volume	24	de
jgu.journal.issue	5	de
jgu.pages.start	1471	de
jgu.pages.end	1476	de
jgu.publisher.year	2024	-
jgu.publisher.name	American Chemical Society	de
jgu.publisher.place	Washington, DC	de
jgu.publisher.issn	1530-6992	de
jgu.organisation.place	Mainz	-
jgu.subject.ddccode	530	de
jgu.publisher.doi	10.1021/acs.nanolett.3c02890	de
jgu.organisation.ror	https://ror.org/023b0x485	-
jgu.subject.dfg	Naturwissenschaften	de
Appears in collections:	DFG-491381577-H

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