Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-202
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dc.contributor.authorDong, Bo-Wen-
dc.contributor.authorBaldrati, Lorenzo-
dc.contributor.authorSchneider, Christoph-
dc.contributor.authorNiizeki, Tomohiko-
dc.contributor.authorRamos, Rafael-
dc.contributor.authorRoss, Andrew-
dc.contributor.authorCramer, Joel-
dc.contributor.authorSaitoh, Eiji-
dc.contributor.authorKläui, Mathias-
dc.date.accessioned2019-08-20T12:33:23Z-
dc.date.available2019-08-20T14:33:23Z-
dc.date.issued2019-
dc.identifier.urihttps://openscience.ub.uni-mainz.de/handle/20.500.12030/204-
dc.description.abstractWe study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and γ-Fe2O3 layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.en_GB
dc.language.isoeng-
dc.rightsInCopyrightde_DE
dc.rights.urihttps://rightsstatements.org/vocab/InC/1.0/-
dc.subject.ddc530 Physikde_DE
dc.subject.ddc530 Physicsen_GB
dc.titleAntiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in gamma-Fe2O3/NiO/Pt epitaxial stacksen_GB
dc.typeZeitschriftenaufsatzde_DE
dc.identifier.urnurn:nbn:de:hebis:77-publ-591981-
dc.identifier.doihttp://doi.org/10.25358/openscience-202-
jgu.type.dinitypearticle-
jgu.type.versionAccepted versionen_GB
jgu.type.resourceText-
jgu.organisation.departmentFB 08 Physik, Mathematik u. Informatik-
jgu.organisation.number7940-
jgu.organisation.nameJohannes Gutenberg-Universität Mainz-
jgu.rights.accessrightsopenAccess-
jgu.journal.titleApplied physics letters-
jgu.journal.volume114-
jgu.journal.issue10-
jgu.pages.alternativeArt. 102405-
jgu.publisher.year2019-
jgu.publisher.nameAmerican Inst. of Physics-
jgu.publisher.placeMelville, NY-
jgu.publisher.urihttp://dx.doi.org/10.1063/1.5080766-
jgu.publisher.issn1077-3118-
jgu.publisher.issn0003-6951-
jgu.organisation.placeMainz-
jgu.subject.ddccode530-
opus.date.accessioned2019-08-20T12:33:23Z-
opus.date.modified2019-09-03T09:22:28Z-
opus.date.available2019-08-20T14:33:23-
opus.subject.dfgcode00-000-
opus.organisation.stringFB 08: Physik, Mathematik und Informatik: Institut für Physikde_DE
opus.identifier.opusid59198-
opus.institute.number0801-
opus.metadataonlyfalse-
opus.type.contenttypeForschungsberichtde_DE
opus.type.contenttypeResearch Reporten_GB
opus.affiliatedBaldrati, Lorenzo-
opus.affiliatedCramer, Joel-
opus.affiliatedKläui, Mathias-
jgu.publisher.doi10.1063/1.5080766
jgu.organisation.rorhttps://ror.org/023b0x485
Appears in collections:JGU-Publikationen

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