Please use this identifier to cite or link to this item: http://doi.org/10.25358/openscience-202
Authors: Dong, Bo-Wen
Baldrati, Lorenzo
Schneider, Christoph
Niizeki, Tomohiko
Ramos, Rafael
Ross, Andrew
Cramer, Joel
Saitoh, Eiji
Kläui, Mathias
Title: Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in gamma-Fe2O3/NiO/Pt epitaxial stacks
Online publication date: 20-Aug-2019
Year of first publication: 2019
Language: english
Abstract: We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and γ-Fe2O3 layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.
DDC: 530 Physik
530 Physics
Institution: Johannes Gutenberg-Universität Mainz
Department: FB 08 Physik, Mathematik u. Informatik
Place: Mainz
ROR: https://ror.org/023b0x485
DOI: http://doi.org/10.25358/openscience-202
URN: urn:nbn:de:hebis:77-publ-591981
Version: Accepted version
Publication type: Zeitschriftenaufsatz
License: In Copyright
Information on rights of use: https://rightsstatements.org/vocab/InC/1.0/
Journal: Applied physics letters
114
10
Pages or article number: Art. 102405
Publisher: American Inst. of Physics
Publisher place: Melville, NY
Issue date: 2019
ISSN: 1077-3118
0003-6951
Publisher URL: http://dx.doi.org/10.1063/1.5080766
Publisher DOI: 10.1063/1.5080766
Appears in collections:JGU-Publikationen

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